Sic growth furnace PVT method 6inch 8inch 12 inch low energy consumption

Sic growth furnace PVT method 6inch 8inch 12 inch low energy consumption

The silicon carbide induction growth furnace is a device for growing high quality silicon carbide (SiC) crystals using induction heating technology to provide a high temperature environment. Induction growth furnace directly heats the graphite crucible and raw materials through the principle of electromagnetic induction. It has the characteristics of fast heating speed, precise temperature control and low energy consumption, and is one of the key equipment for preparing silicon carbide single crystal.

Characteristics of SiC induction growth furnace

· High efficiency heating: induction heating speed, high thermal efficiency, low energy consumption.

· Precise temperature control: The temperature control accuracy can reach ±1°C to ensure the quality of crystal growth.

· High stability: induction heating without contact, reduce pollution, suitable for long-term continuous work.

· Low pollution: high purity graphite and inert atmosphere are used to reduce the influence of impurities on crystal quality.

Technical specifications

Design advantage

1. meet 6 inch /8 inch crystal growth;

2. meet the semi-insulated and conductive crystal growth environment, crucible rotation to improve temperature uniformity, coil lifting to reduce disturbance;

3. double-layer quartz cylinder water cooled structure, can effectively improve the life of the chamber, provide a stable long crystal environment, conducive to the growth of high-quality crystals;

4. up and down temperature real-time accurate monitoring to facilitate process debugging;

5. optional constant power, constant current, constant temperature working mode;

6. one key intelligent start, reduce manual intervention, conducive to large-scale production;

7. silicon carbide induction long crystal furnace is suitable for the growth of high-quality six-inch silicon carbide single product, high purity silicon carbide raw material synthesis, crystal annealing and other fields;

8. compact three-dimensional machine design, convenient layout, improve plant utilization;

9. Using high-precision butterfly valve and mass flowmeter to control the growth pressure in the furnace, providing a stable growth atmosphere. In particular, the maximum pressure control accuracy of ±1Pa can be achieved under the crystal growth pressure.

The effect of SiC induction growth furnace

The silicon carbide induction growth furnace can efficiently grow high quality and low defect silicon carbide single crystal, the crystal purity can reach 99.999% or more. These single crystals are used to manufacture high-performance power devices (such as MOSFETs, Schottky diodes) and RF devices with high voltage resistance, low on-loss and high frequency characteristics, significantly improving the performance of electric vehicles, solar inverters and 5G communications equipment. In addition, the high temperature stability and precise temperature control of induction growth furnaces ensure crystal consistency and yield, meeting the stringent material requirements of the semiconductor industry.

ZMSH service

ZMSH provides design, manufacturing, installation and after-sales support services for silicon carbide induction growth furnaces, including equipment customization, process optimization and technical training. With advanced induction heating technology and extensive industry experience, we ensure high efficiency, stability and low energy consumption of our equipment, while providing fast response and 24/7 technical support to help customers achieve large-scale production of high-quality silicon carbide crystals.