4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices

4H-N 4H-SEMI 2inch 3inch 4inch 6Inch SiC Substrate Production grade dummy grade for High-Power Devices

H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​

Application areas

1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

Silicon Carbide SiC crystal substrate wafer carborundum

4H-N and 4H-SEMI SiC (Silicon Carbide) substrates, available in a range of diameters such as 2-inch, 3-inch, 4-inch, and 6-inch, are widely utilized for the fabrication of high-power devices due to their superior material properties. Here are the key properties of these SiC substrates, making them ideal for high-power applications:

1. Wide Bandgap: 4H-SiC has a wide bandgap of about 3.26 eV, which allows it to operate efficiently at higher temperatures, voltages, and frequencies compared to traditional semiconductor materials like silicon.

2. High Breakdown Electric Field: SiC's high breakdown electric field (up to 2.8 MV/cm) enables devices to handle higher voltages without breakdown, making it essential for power electronics such as MOSFETs and IGBTs.

3. Excellent Thermal Conductivity: SiC has a thermal conductivity around 3.7 W/cm·K, significantly higher than silicon, allowing it to dissipate heat more effectively. This is crucial for devices in high-temperature environments.

4. High Saturation Electron Velocity: SiC offers a high electron saturation velocity, enhancing the performance of high-frequency devices, which are used in applications such as radar systems and 5G communication.

5. Mechanical Strength and Hardness: The hardness and robustness of SiC substrates ensure long-term durability, even in extreme operating conditions, making them highly suitable for industrial-grade devices.

6. Low Defect Density: Production-grade SiC substrates are characterized by low defect densities, ensuring optimal device performance, whereas dummy-grade substrates may have a higher defect density, suitable for testing and equipment calibration purposes.

These properties make 4H-N and 4H-SEMI SiC substrates indispensable in the development of high-performance power devices used in electric vehicles, renewable energy systems, and aerospace applications.

SILICON CARBIDE MATERIAL PROPERTIES

2. substrates size of standard for 6inch

Delivery Sample

The Other Services we can provide

1.Customized thickness wire-cut 2. customized size chip slice 3. cuotomized shape lens